document number: 94629 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 add-a-pak generation vii power modules thyristor/diode and thyristor/thyristor, 27 a vskt26.., vskh26.., vskl26.., vskn26.. series vishay semiconductors mechanical description the add-a-pak generation vii, new generation of add-a-pak module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplif ied internal structure with minimized number of interfaces. features ? high voltage ? industrial standard package ? ul approved file e78996 ? low thermal resistance ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level benefits ? excellent thermal performances obtained by the usage of exposed direct bonded copper substrate ? up to 1600 v ? high surge capability ? easy mounting on heatsink electrical description these modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, ups and battery charger. product summary i t(av) or i f(av) 27 a add-a-pak major ratings and characteristics symbol characteristics values units i t(av) or i f(av) 85 c 27 a i o(rms) as ac switch 60 i tsm, i fsm 50 hz 400 60 hz 420 i 2 t 50 hz 800 ka 2 s 60 hz 730 i 2 t 8000 ka 2 s v rrm range 400 to 1600 v t stg - 40 to 125 c t j
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94629 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-may-10 vskt26.., vskh26.., vskl26.., vskn26.. series vishay semiconductors add-a-pak generation vii power modules thyristor/diode and thyr istor/thyristor, 27 a electrical specifications notes (1) i 2 t for time t x = i 2 t x t x (2) average power = v t(to) x i t(av) + r t x (i t(rms) ) 2 (3) 16.7 % x x i av < i < x i av (4) i > x i av voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v v drm , maximum repetitive peak off-state voltage, gate open circuit v i rrm, i drm at 125 c ma vsk.26 04 400 500 400 15 06 600 700 600 08 800 900 800 10 1000 1100 1000 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 on-state conduction parameter symbol test conditions values units maximum average on-state current (thyristors) i t(av) 180 conduction, half sine wave, t c = 85 c 27 a maximum average forward current (diodes) i f(av) maximum continuous rms on-state current, as ac switch i o(rms) 60 maximum peak, one-cycle non-repetitive on-state or fo rward current i tsm or i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 400 t = 8.3 ms 420 t = 10 ms 100 % v rrm reapplied 335 t = 8.3 ms 350 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied initial t j = t j maximum 800 a 2 s t = 8.3 ms 730 t = 10 ms 100 % v rrm reapplied 560 t = 8.3 ms 510 maximum i 2 t for fusing i 2 t (1) t = 0.1 ms to 10 ms, no voltage reapplied t j = t j maximum 8000 a 2 s maximum value or threshold voltage v t(to) (2) low level (3) t j = t j maximum 0.86 v high level (4) 1.09 maximum value of on-state slope resistance r t (2) low level (3) t j = t j maximum 9.58 m high level (4) 7.31 maximum peak on-state or forward voltage v tm i tm = x i t(av) t j = 25 c 1.65 v v fm i fm = x i f(av) maximum non-repetitive rate of rise of turned on current di/dt t j = 25 c, from 0.67 v drm , i tm = x i t(av) , i g = 500 ma, t r < 0.5 s, t p > 6 s 150 a/s maximum holding current i h t j = 25 c, anode supply = 6 v, resistive load, gate open circuit 200 ma maximum latching current i l t j = 25 c, anode supply = 6 v, resistive load 400 or i (rms) i (rms)
document number: 94629 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vskt26.., vskh26.., vskl26.., vskn26.. series add-a-pak generation vii power modules thyristor/diode and thyristor/thyristor, 27 a vishay semiconductors note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units maximum peak gate power p gm 10 w maximum average gate power p g(av) 2.5 maximum peak gate current i gm 2.5 a maximum peak negative gate voltage - v gm 10 v maximum gate voltage required to trigger v gt t j = - 40 c anode supply = 6 v resistive load 4.0 t j = 25 c 2.5 t j = 125 c 1.7 maximum gate current required to trigger i gt t j = - 40 c anode supply = 6 v resistive load 270 ma t j = 25 c 150 t j = 125 c 80 maximum gate voltage th at will not trigger v gd t j = 125 c, rated v drm applied 0.25 v maximum gate current th at will not trigger i gd t j = 125 c, rated v drm applied 6 ma blocking parameter symbol test conditions values units maximum peak reverse and off-state leakage current at v rrm , v drm i rrm, i drm t j = 125 c, gate open circuit 15 ma maximum rms insulation voltage v ins 50 hz 3000 (1 min) 3600 (1 s) v maximum critical rate of rise of off-state voltage dv/dt t j = 125 c, linear to 0.67 v drm 1000 v/s thermal and mechanical specifications parameter symbol test conditions values units junction operating and storage temperature range t j , t stg - 40 to 125 c maximum internal thermal resistance, junction to case per leg r thjc dc operation 0.76 c/w typical thermal resistance, case to heatsink per module r thcs mounting surface flat, smooth and greased 0.1 mounting torque 10 % to heatsink a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. 4 nm busbar 3 approximate weight 75 g 2.7 oz. case style jedec to-240aa compatible r conduction per junction devices sine half wave conduction rectangular wave conduction units 180 120 90 60 30 180 120 90 60 30 vsk.26.. 0.212 0.258 0.330 0.466 0.72 0.166 0.276 0.357 0.482 0.726 c/w
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94629 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-may-10 vskt26.., vskh26.., vskl26.., vskn26.. series vishay semiconductors add-a-pak generation vii power modules thyristor/diode and thyr istor/thyristor, 27 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - on-state po wer loss characteristics fig. 4 - on-state po wer loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current average on-state current (a) maximum allowable case temperature (c) 0 5 10 15 20 25 30 80 90 100 110 120 130 180 120 90 60 30 rthjc (dc) = 0.76c/w 0 1020304050 80 90 100 110 120 130 180 120 90 60 30 dc rthjc (dc) = 0.76 c/w average on-state current (a) maximum allowable case temperature (c) average on-state current (a) maximum average on-state power loss (w) 0 5 10 15 20 25 30 0 10 20 30 40 50 180 120 90 60 30 rms limit per leg, tj = 125c average on-state current (a) maximum average on-state power loss (w) 0 1020304050 0 10 20 30 40 50 60 180 120 90 60 30 rms limit dc per leg, tj = 125c peak half sine wave on-state current (a) number of equal amplitude half cycle current pulses (n) 110100 150 200 250 300 350 400 at any rated load condition and with rated vrrm applied following surge initial tj = tj max @ 60 hz 0.0083 s @ 50 hz 0.0100s per leg peak half sine wave on-state current (a) pulse train duration (s) 0.01 0.1 1 150 200 250 300 350 400 maximum non-repetitive surge current. control of conduction may not be maintained. versus pulse train duration initial tj = 125c no voltage reapplied rated vrrm reapplied per leg
document number: 94629 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vskt26.., vskh26.., vskl26.., vskn26.. series add-a-pak generation vii power modules thyristor/diode and thyristor/thyristor, 27 a vishay semiconductors fig. 7 - on-state power loss characteristics fig. 8 - on-state power loss characteristics fig. 9 - on-state power loss characteristics total rms output current (a) maximum total on-state power loss (w) maximum allowable ambient temperature (c) 0 20 40 60 80 100 120 140 rthsa = 0.1 c/w 0.3 c/w 0.5 c/w 0.7 c/w 1 c/w 1.5 c/w 2 c/w 3 c/w 4 c/w 8 c/w 0 102030405060 0 10 20 30 40 50 60 70 80 90 100 180 120 90 60 30 vsk.26 series per module tj = 125c total output current (a) maximum total power loss (w) maximum allowable ambient temperature (c) 0 20 40 60 80 100 120 140 rthsa = 0.1 c/w 0.3 c/w 0.5 c/w 0.7 c/w 1 c/w 1.5 c/w 3 c/w 8 c/w 0 102030405060 0 50 100 150 200 250 180 (sine) 180 (rect) 2 x vsk.26 series single phase bridge connected tj = 125c total output current (a) maximum allowable ambient temperature (c) maximum total power loss (w) 0 20 40 60 80 100 120 140 rthsa = 0.1 c/w 0.3 c/w 0.4 c/w 0.5 c/w 0.7 c/w 1 c/w 1.5 c/w 3 c/w 0 20406080 0 50 100 150 200 250 300 120 (rect) 3 x vsk.26 series three phase bridge connected tj = 125c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94629 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-may-10 vskt26.., vskh26.., vskl26.., vskn26.. series vishay semiconductors add-a-pak generation vii power modules thyristor/diode and thyr istor/thyristor, 27 a fig. 10 - on-state volt age drop characteristics fig. 11 - thermal impedance z thjc characteristics fig. 12 - gate characteristics instantaneous on-state voltage (v) instantaneous on-state current (a) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 1 10 100 1000 tj = 25c tj = 125c per leg square wave pulse duration (s) transient thermal impedance z thjc (c/w) 0.001 0.01 0.1 1 10 0.01 0.1 1 10 steady state value rthjc = 0.76 c/w (dc operation) per leg 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 (b) (a) rectangular g ate pulse (4) (3) (2) (1) (1) pgm = 100 w, t p = 500 s (2) pgm = 50 w, t p = 1 ms (3) pgm = 20 w, t p = 25 ms (4) pgm = 10 w, t p = 5 ms tj = - 4 0 c tj = 2 5 c tj = 12 5 c a )rec ommended load line for b)recommended load line for vgd igd frequency limited by pg(av) rated di/ d t: 20 v, 30 ohms tr = 0.5 s, tp >= 6 s <= 30% rated di/dt: 20 v, 65 ohms tr = 1 s, tp >= 6 s irk.26.. se ries instantaneous gate voltage (v) instantaneous gate current (a) vsk.
document number: 94629 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 vskt26.., vskh26.., vskl26.., vskn26.. series add-a-pak generation vii power modules thyristor/diode and thyristor/thyristor, 27 a vishay semiconductors ordering information table note ? to order the optional hardware go to www.vishay.com/doc?95172 circuit configuration links to related documents dimensions www.vishay.com/doc?95368 1 - module type 2 - circuit configuration (see end of datasheet) 3 - current code (27 a) 4 - voltage code (see voltage ratings table) device code 13 24 vsk t 26 / 16 + - k1 (5) k2 (7) g2 (6) g1 (4) ~ (1) (2) (3) + - k2 (7) g2 (6) ~ (1) (2) (3) + - k1 (5) g1 (4) ~ (1) (2) (3) + + k1 (5) g1 (4) - (1) (2) (3) vskt 1 2 3 4 5 7 6 vskl 1 2 3 7 6 vskh 1 2 3 4 5 vskn 1 2 3 4 5
document number: 95368 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 11-nov-08 1 add-a-pak generation vii - thyristor outline dimensions vishay semiconductors dimensions in millimeters (inches) 35 ref. 30 0.5 (1.18 0.020) 29 0.5 (1 0.020) viti m5 x 0.8 screws m5 x 0.8 18 (0.7) ref. 15.5 0.5 (0.6 0.020) fast-on tab 2.8 x 0.8 (0.110 x 0.03) 6.7 0.3 (0.26 0.012) 30 1 (1.18 0.039) 24 0.5 (1 0.020) 1 2 3 4 5 7 6 80 0.3 (3.15 0.012) 92 0.75 (3.6 0.030) 20 0.5 (0.79 0.020) 20 0.5 (0.79 0.020) 15 0.5 (0.59 0.020) 22.6 0.2 (0.89 0.008) 6.3 0.2 (0.248 0.008) 5.8 0.25 (0.228 0.010) 4 0.2 (0.157 0.008)
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